 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TENTATIVE Semiconductor STK03Y60 Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * High Voltage: BVDSS=600V(Min.) * Low Crss : Crss=4pF(Typ.) * Low gate charge : Qg=12nC(Typ.) * Low RDS(on) : RDS(on)=5.5(Typ.) Ordering Information Type NO. STK03Y60 Marking STK03Y60 Package Code TO-92 Outline Dimensions 4.40~4.80 4.40~4.80 unit : mm 0.50 Max. 13.50~14.50 1.27 Typ. 1.27 Typ. 1 3.40~3.60 23 PIN Connections 1. Gate 2. Drain 3. Source 0.45 Max. TENTATIVE 1 TENTATIVE STK03Y60 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** * ** (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 600 30 0.3 1.2 625 0.3 53 0.3 11 150 -55~150 Unit V V A A mW A mJ A mJ C Drain current (Pulsed) Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) ** Typ. - Max 200 Unit /W TENTATIVE 2 TENTATIVE STK03Y60 N-CH Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Ta=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS=VGS VDS=600V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=150mA VDS=10V, ID=150mA VGS=0V, VDS=25V, f=1MHz Min. 600 3.0 - Typ. 5.5 0.32 130 20 4 5.5 5 13 28 12 2.5 3.0 Max. 5.0 1 100 8.5 18 3.8 4.5 Unit V V A nA S pF VDD=300V, ID=0.3A RG=25 - ns VDD=300V, VGS=10V ID=0.3A - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current Source current(Plused) Forward voltage Reverse recovery time Reverse recovery charge (Ta=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.3A Is=0.3A, Vgs=0V diS/dt=80A/us Min - Typ 0.7 260 3.5 Max 0.3 1.2 1.2 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=109mH, IAS=0.3A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature TENTATIVE 3 TENTATIVE STK03Y60 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. TENTATIVE 4 |
Price & Availability of STK03Y60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |